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| KHC21025 features high-speed switching no secondary breakdown very low on-resistance. absolute maximum ratings ta = 25 parameter symbol n-channel p-channel unit drain to source voltage v dss 30 -30 v gate to source voltage v gs 20 20 v drain current ts 80 i d 3.5 -2.3 a peak drain current *1 i dm 14 -10 a total power dissipation t s =80 ;*2 t amb =25 ;*3 t amb =25 ;*4 t amb =25 ;*5 storage temperature t stg operating junction temperature t j source current (dc) ts 80 i s 1.5 -1.25 a peak pulsed source current *1 i sm 6 -5 a thermal resistance from junction to soldering point r th j-s k/w *1 pulse width and duty cycle limited by maximum junction temperature. *2 maximum permissible dissipation per mos transistor. both devices may be loaded up to 2 w at the same time. *3 maximum permissible dissipation per mos transistor. device mounted on printed-circuit board with an r th a-tp (ambient to tie-point) of 27.5 k/w. *4 maximum permissible dissipation per mos transistor. device mounted on printed-circuit board with an r th a-tp (ambient to tie-point) of 90 k/w. *5 maximum permissible dissipation if only one mos transistor dissipates. device mounted on printed-circuit boardwith anr th a-tp (ambient to tie-point) of 90 k/w. p tot 2 2 1 1.3 w 150 -65to150 35 smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com
smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons type min typ max unit v gs =0;i d =10ma n-ch 30 v v gs =0;i d =-10ma p-ch -30 v v gs =v ds ;i d = 1 ma n-ch 1 2.8 v v gs =v ds ;i d =-1ma p-ch -1 -2.8 v v gs =0;v ds = 24 v n-ch 100 na v gs =0;v ds =-24v p-ch -100 na n-ch 100 na p-ch 100 na v gs =10v;v ds =1v 3.5 a v gs =4.5v;v ds =5v 2 a v gs =-10v;v ds =-1v -2.3 a v gs =-4.5v;v ds =-5v -1 a v gs =4.5v;i d = 1 a 0.11 0.2 v gs =10v;i d = 2.2 a 0.08 0.1 v gs =-4.5v;i d = - 0.5 a 0.33 0.4 v gs =-10v;i d = -1 a 0.22 0.25 v ds =20v;i d =2.2a n-ch 2 4.5 s v ds =-20v;i d =-1a p-ch 1 2 s v gs =0;v ds =20v;f=1mhz n-ch 250 pf v gs =0;v ds = -20 v; f = 1 mhz p-ch 250 pf v gs =0;v ds =20v;f=1mhz n-ch 140 pf v gs =0;v ds = -20 v; f = 1 mhz p-ch 140 pf v gs =0;v ds =20v;f=1mhz n-ch 50 pf v gs =0;v ds = -20 v; f = 1 mhz p-ch 50 pf v gs =10v;v ds =15v;i d =2.3a n-ch 10 30 nc v gs =-10v;v ds =-15v;i d = -2.3 a p-ch 10 25 nc v gs =10v;v ds =15v;i d =2.3a n-ch 1 nc v gs =-10v;v ds =-15v;i d =-2.3a p-ch 1 nc v gs =10v;v ds =15v;i d = 2.3 a n-ch 2.5 nc v gs =-10v;v ds =-15v;i d =-2.3a p-ch 3 nc v gs =0 to 10 v; v dd =20v;i d =1a;r l =20 n-ch 15 40 ns v gs =0 to -10v;v dd =-20v;i d =-1 a;r l =20 p-ch 20 80 ns v gs =10to0v;v dd =20v;i d =1a;r l =20 n-ch 25 140 ns v gs =-10to0v;v dd =-20v;i d =-1 a;r l =20 p-ch 50 140 ns v gd =0;i s = 1.25 a n-ch 1.2 v v gd =0;i s = -1.25 a p-ch -1.6 v i s =1.25a;d i /d t =100a/ s n-ch 35 100 ns i s =-1.25a;d i /d t = 100 a/ s p-ch 150 200 ns t off v sd t rr reverse recovery time source-drain diode forward voltage turn-off time q gd gate-drain charge t on turn-on time q g total gate charge q gs gate-source charge c oss output capacitance c rss reverse transfer capacitance |y fs | forward transfer admittance c iss input capacitance p-ch i don on-state drain current r dson drain-source on-state resistance v gs = 20 v; v ds =0 n-ch p-ch n-ch i dss drain-source leakage current i gss gate leakage current v (br)dss drain-source breakdown voltage v gsth gate-source threshold voltage KHC21025 smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification 4008-318-123 sales@twtysemi.com 2of 2 http://www.twtysemi.com |
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